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HAT1111C
Silicon P Channel MOS FET Power Switching
REJ03G0446-0600 Rev.6.00 May 19.2005
Features
* Low on-resistance RDS(on) = 245 m typ. (at VGS = -10 V) * Low drive current. * 4.5 V gate drive devices. * High density mounting
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 S 1
2345 DDD D 6 G 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID (pulse)Note1 IDR PchNote 2 Ratings -60 -20 / +10 -2 -8 -2 1.25 Unit V V A A A W C C
Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board. (FR4 40 x 40 x 1.6mm), PW 5 s, Ta = 25C
Rev.6.00 May 19, 2005 page 1 of 6
HAT1111C
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min. -60 -20 +10 -- -- -1 -- -- 0.65 -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- 245 310 1 290 40 20 6 0.7 1.2 20 25 37 4 -0.85 Max. -- -- 10 -1 -2 307 450 -- -- -- -- -- -- -- -- -- -- -- -1.2 Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = -16 / +8 V, VDS = 0 VDS = -60 V, VGS = 0 ID = -1 mA, VDS = -10 V Note3 ID = -1 A, VGS = -10 V Note3 ID = -1 A, VGS = -4.5 V Note3 ID = -1 A, VDS = -10 V Note3 VDS = -10 V, VGS = 0 f = 1 MHz VDS = -10 V, VGS = -10 V ID = -2 A VDS = -10 V, VGS = -10 V ID = -1 A, RL = 10 , Rg = 4.7 IF = -2 A, VGS = 0
Rev.6.00 May 19, 2005 page 2 of 6
HAT1111C
Main Characteristics
Power vs. Temperature Derating 1.6 -100 -30 Maximum Safe Operation Area
Ta = 25C,1shot pulse When using the FR4 board.
Pch (W)
ID (A)
100 s
1.2
-10 -3 -1 -0.3 -0.1
Operation in this
10 s
Power Dissipation
Drain Current
0.8
PW
1
= 10 m
m
s
s
0.4
-0.03 0 50 100 150 Ta (C) 200
area is limited by RDS(on)
-0.01 -0.03 -0.1 -0.3
-1
-3
-10 -30 -100 VDS (V)
Ambient Temperature
Drain to Source Voltage
Typical Output Characteristics -10 -10 V
-4.5 V
Typical Transfer Characteristics -10 VDS = -10 V Pulse Test 25C Tc = 75C -25C
Pulse Test
ID (A)
-6
Drain Current
-3.5 V
ID (A) Drain Current
-8
-4 V
-8
-6
-4
-3 V
-2.5 V VGS = -2 V
-4
-2
-2
0
-2 -4 -6 Drain to Source Voltage
-8 -10 VDS (V)
0
-2 -4 -6 Gate to Source Voltage
-8 -10 VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage -800
Static Drain to Source on State Resistance vs. Drain Current 1000 -4.5V
Drain to Source Saturation Voltage VDS(on) (mV)
Pulse Test
-600 ID = -2 A -400 -1 A -200 -0.5 A 0 -4 -8 -12 -16 -20 10 -0.01 -0.1 Drain Current -1 ID (A) Pulse Test -10 100 VGS = 10 V
Gate to Source Voltage
VGS (V)
Rev.6.00 May 19, 2005 page 3 of 6
HAT1111C
Static Drain to Source On State Resistance vs. Temperature 1000 Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
100 30 10 3 1 0.3 0.1 -0.1
800 ID = -0.5,-1 A 600 -2 A -4.5V -0.5,-1 A -2 A
Tc = -25C 25C 75C
400
200 0 -25
VGS = -10V
Pulse Test 0 25 50 75 100 125 150 Tc (C) Case Temperature
VDS = -10 V Pulse Test
-0.3
-1
-3
-10
-30
-100
Drain Current
ID (A)
Dynamic Input Characteristics 0
VDS (V)
Typical Capacitance vs. Drain to Source Voltage 0
VGS (V)
10000 3000
VDD = -50 V -25 V -10 V -20 VDD = -10 V -25 V -50 V VDD -60 ID = -2 A -80 0 2 4 Gate Charge VGS 6 8 Qg (nC) -16 10 -12 -4
VGS = 0 f = 1 MHz Ciss
Drain to Source Voltage
Gate to Source Voltage
Capacitance C (pF)
1000 300 100 30 10 3 1
-40
-8
Coss Crss
0
-10
-20
-30
-40
-50 VDS (V)
-60
Drain to Source Voltage
Reverse Drain Current vs. Source to Drain Voltage -10
IDR (A)
Switching Characteristics 1000 tr
Switching Time t (ns)
-8 -6
-10 V
Reverse Drain Current
100 td(off) td(on) tf 1 -0.01 -0.03
VGS = 0 , 10 V
-4
10
-2 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 VSD (V) -2.0 Source to Drain Voltage
-0.1 -0.3 Drain Current
-1
-3
-10
ID (A)
Rev.6.00 May 19, 2005 page 4 of 6
HAT1111C
Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Vin -4.5 V V DD = -10 V Vout td(on) 90% 10% tr td(off) 90% 90% 10% tf Vout Monitor Vin 10% Switching Time Waveform
Rev.6.00 May 19, 2005 page 5 of 6
HAT1111C
Package Dimensions
JEITA Package Code RENESAS Code PWSF0006JA-A Package Name CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A S A b
L
Reference Symbol
Dimension in Millimeters
e A2 A
yS
A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas
A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1
Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
c
A-A Section
1.65
Ordering Information
Part Name HAT1111C-EL-E Quantity 3000 pcs Shipping Container Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.6.00 May 19, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001
http://www.renesas.com
(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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